Wednesday, May 16, 2012

techPowerUp!: (PR) STEC CellCare Technology Delivers Big Boost in 24 nm MLC NAND Flash Memory Endurance

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(PR) STEC CellCare Technology Delivers Big Boost in 24 nm MLC NAND Flash Memory Endurance
May 16th 2012, 05:25

STEC, Inc., a leading global provider of solid-state drive (SSD) technologies and products, today announced that the company has validated its proprietary CellCare Technology's ability to extend the endurance of 24 nm consumer-grade multi-level cell (cMLC) NAND flash memory to 40,000 program/erase cycles. This represents an increase of greater than 13 times the manufacturer's specified endurance metric of 3,000 program/erase cycles. This is a significant advancement in one of the company's core technologies, as it provides for the development of a new generation of STEC's enterprise-class SSDs that utilizes low-cost cMLC NAND chips, while still achieving 10 full capacity random writes to the drive each day for five years, and data retention for three months (at 40°C)-all with no degradation in performance. This equates to approximately 7.3 petabytes (PB) of data being written to a 400 GB SSD over the life of the drive.

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